Parameter Extraction Procedure for an Electrothermal Transistor Model
نویسندگان
چکیده
A simple method for transistor DC parameter extraction is presented, where the self-heating of the transistor is taken into account. The thermal behaviour of the transistor is modelled using a single thermal resistance, whose value is extracted simultaneously with the electrical parameters. When pulsed measurements are performed the usage of the thermal resistance, as an effective thermal resistance, is still justified. The method is applied to MESFET parameter extraction.
منابع مشابه
Parameter Extraction Procedure for an Electrothermal
Model Timo Veijola, Mikael Andersson*, and Antti Kallio Helsinki University of Technology, Faculty of Electrical Engineering, Circuit Theory Laboratory, Otakaari 5A, FIN-02150 Espoo, Finland. phone:+358-0-4512293, fax:+358-0-460224, e-mail:[email protected] *Nokia Research Center. P.O. Box 45, FIN-00211 Helsinki, Finland. Abstract| A simple method for transistor DC parameter extraction is prese...
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